MBRS1100T3G, SMB
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см. техническую документацию
см. техническую документацию
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484 ֏
1 шт.
на сумму 484 ֏
Описание
диоды Шоттки
This ON Semiconductor Schottky power rectifier employs the Schottky barrier principle using a barrier metal to create the best forward voltage drop−reverse current exchange.
Технические параметры
Brand | ON Semiconductor |
Configuration | Single |
Factory Pack Quantity | 2500 |
Height | 2.13 mm |
If - Forward Current | 2 A |
Ifsm - Forward Surge Current | 50 A |
Ir - Reverse Current | 500 uA |
Length | 4.32 mm |
Manufacturer | ON Semiconductor |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -65 C |
Mounting Style | SMD/SMT |
Operating Temperature Range | -65 C to+175 C |
Package / Case | SMB |
Packaging | Reel |
Part # Aliases | MBRS120T3G |
Product | Schottky Diodes |
Product Category | Schottky Diodes Rectifiers |
RoHS | Details |
Series | MBRS1100 |
Technology | Si |
Termination Style | SMD/SMT |
Type | Schottky Diode |
Unit Weight | 0.006349 oz |
Vf - Forward Voltage | 0.75 V at 1 A |
Vrrm - Repetitive Reverse Voltage | 100 V |
Width | 3.56 mm |
Diode Configuration | Single |
Diode Technology | Schottky Barrier |
Diode Type | Schottky |
Maximum Continuous Forward Current | 2A |
Maximum Forward Voltage Drop | 750mV |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | DO-214AA(SMB) |
Peak Non-Repetitive Forward Surge Current | 50A |
Peak Reverse Repetitive Voltage | 100V |
Pin Count | 2 |
Rectifier Type | Schottky Rectifier |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 106 КБ
Datasheet
pdf, 126 КБ
Datasheet MBRS1100T3G
pdf, 130 КБ
Документация
pdf, 176 КБ
Диоды импортные
pdf, 304 КБ