IRFU120NPBF, TO-251AA
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440 ֏
от 20 шт. —
238 ֏
от 80 шт. —
216 ֏
от 140 шт. —
206 ֏
1 шт.
на сумму 440 ֏
Альтернативные предложения1
Описание
транзисторы полевые импортные
The Infineon range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages.
Технические параметры
Base Product Number | IRFU120 -> |
Current - Continuous Drain (Id) @ 25В°C | 9.4A (Tc) |
Drain to Source Voltage (Vdss) | 100V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
ECCN | EAR99 |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 25nC @ 10V |
HTSUS | 8541.29.0095 |
Input Capacitance (Ciss) (Max) @ Vds | 330pF @ 25V |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
Mounting Type | Through Hole |
Operating Temperature | -55В°C ~ 175В°C (TJ) |
Package | Tube |
Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
Power Dissipation (Max) | 48W (Tc) |
Rds On (Max) @ Id, Vgs | 210mOhm @ 5.6A, 10V |
REACH Status | REACH Unaffected |
RoHS Status | ROHS3 Compliant |
Series | HEXFETВ® -> |
Supplier Device Package | IPAK (TO-251) |
Technology | MOSFET (Metal Oxide) |
Vgs (Max) | В±20V |
Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Крутизна характеристики S,А/В | 2.7 |
Максимальное пороговое напряжение затвор-исток Uзи макс.,В | 4 |
Сопротивление канала в открытом состоянии Rси вкл.,мОм | 210 |
Температура, С | -55…+175 |
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 9.4 A |
Maximum Drain Source Resistance | 210 mΩ |
Maximum Drain Source Voltage | 100 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 4V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 48 W |
Minimum Gate Threshold Voltage | 2V |
Minimum Operating Temperature | -55 °C |
Number of Elements per Chip | 1 |
Package Type | IPAK(TO-251) |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 25 nC @ 10 V |
Width | 2.3mm |
FET Feature | - |
Manufacturer | Infineon Technologies |
Packaging | Tube |
Part Status | Active |
Техническая документация
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