SI1062X-T1-GE3
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Описание
Trans MOSFET N-CH 20V 0.53A 3-Pin SC-89 T/R
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Flat |
| Maximum Continuous Drain Current (A) | 0.53 |
| Maximum Drain Source Resistance (mOhm) | 420@4.5V |
| Maximum Drain Source Voltage (V) | 20 |
| Maximum Gate Source Leakage Current (nA) | 30000 |
| Maximum Gate Source Voltage (V) | ±8 |
| Maximum Gate Threshold Voltage (V) | 1 |
| Maximum IDSS (uA) | 1 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 220 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | TrenchFET |
| Product Category | Power MOSFET |
| Standard Package Name | SC |
| Supplier Package | SC-89 |
| Typical Fall Time (ns) | 11 |
| Typical Gate Charge @ Vgs (nC) | 1.8@8V|1@4.5V |
| Typical Input Capacitance @ Vds (pF) | 43@10V |
| Typical Rise Time (ns) | 14 |
| Typical Turn-Off Delay Time (ns) | 16 |
| Typical Turn-On Delay Time (ns) | 2 |
| Maximum Continuous Drain Current | 530 mA |
| Maximum Drain Source Voltage | 20 V |
| Mounting Type | Surface Mount |
| Package Type | SC-89 |
| Вес, г | 1 |
