N-Channel MOSFET, 7.7 A, 60 V IPAK IRFU014PBF
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Технические параметры
| Channel Type | N |
| Maximum Continuous Drain Current | 7.7 A |
| Maximum Drain Source Voltage | 60 V |
| Mounting Type | Through Hole |
| Package Type | IPAK(TO-251) |
| Automotive | No |
| Channel Mode | Enhancement |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Maximum Continuous Drain Current (A) | 7.7 |
| Maximum Drain Source Resistance (mOhm) | 200 10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Leakage Current (nA) | 100 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 4 |
| Maximum IDSS (uA) | 25 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 2500 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Through Hole |
| Number of Elements per Chip | 1 |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Product Category | Power MOSFET |
| Standard Package Name | TO-251 |
| Supplier Package | IPAK |
| Tab | Tab |
| Typical Fall Time (ns) | 19 |
| Typical Gate Charge @ 10V (nC) | 11(Max) |
| Typical Gate Charge @ Vgs (nC) | 11(Max)10V |
| Typical Gate to Drain Charge (nC) | 5.8(Max) |
| Typical Gate to Source Charge (nC) | 3.1(Max) |
| Typical Input Capacitance @ Vds (pF) | 300 25V |
| Typical Output Capacitance (pF) | 160 |
| Typical Reverse Recovery Charge (nC) | 200 |
| Typical Rise Time (ns) | 50 |
| Typical Turn-Off Delay Time (ns) | 13 |
| Typical Turn-On Delay Time (ns) | 10 |
| Current - Continuous Drain (Id) @ 25В°C | 7.7A(Tc) |
| Drain to Source Voltage (Vdss) | 60V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 25V |
| Manufacturer | Vishay Siliconix |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Packaging | Tube |
| Power Dissipation (Max) | 2.5W(Ta), 25W(Tc) |
| Rds On (Max) @ Id, Vgs | 200 mOhm @ 4.6A, 10V |
| Series | - |
| Supplier Device Package | TO-251AA |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 4V @ 250ВµA |
Техническая документация
Datasheet
pdf, 886 КБ
Документация
pdf, 865 КБ
