N-Channel MOSFET, 1.7 A, 400 V IPAK IRFU310PBF
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay Semiconductor third generation power mosfet provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Технические параметры
| Channel Type | N |
| Maximum Continuous Drain Current | 1.7 A |
| Maximum Drain Source Voltage | 400 V |
| Mounting Type | Through Hole |
| Package Type | IPAK(TO-251) |
| Channel Mode | Enhancement |
| Continuous Drain Current | 1.7(A) |
| Drain-Source On-Res | 3.6(ohm) |
| Drain-Source On-Volt | 400(V) |
| Gate-Source Voltage (Max) | ±20(V) |
| Mounting | Through Hole |
| Number of Elements | 1 |
| Operating Temp Range | -55C to 150C |
| Operating Temperature Classification | Military |
| Pin Count | 3+Tab |
| Polarity | N |
| Power Dissipation | 2.5(W) |
| Rad Hardened | No |
| Type | Power MOSFET |
Техническая документация
Datasheet
pdf, 829 КБ
Документация
pdf, 806 КБ
