N-Channel MOSFET, 2.4 A, 60 V 8-SOIC SI4948BEY-T1-E3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay Semiconductor dual p-channel 175° mosfet iTime is halogen-free. TrenchFET power mosfet Compliant to RoHS directive 2002/95/EC
Технические параметры
| Channel Type | N |
| Maximum Continuous Drain Current | 2.4 A |
| Maximum Drain Source Voltage | 60 V |
| Mounting Type | Surface Mount |
| Package Type | 8-SOIC |
| Brand: | Vishay Semiconductors |
| Channel Mode: | Enhancement |
| Configuration: | Dual |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 |
| Fall Time: | 35 ns |
| Forward Transconductance - Min: | 8.5 S |
| Id - Continuous Drain Current: | 3.1 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 2 Channel |
| Package / Case: | SOIC-8 |
| Part # Aliases: | SI4948BEY-E3 |
| Pd - Power Dissipation: | 2.4 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 22 nC |
| Rds On - Drain-Source Resistance: | 120 mOhms |
| Rise Time: | 15 ns |
| Series: | SI4 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | P-Channel |
| Transistor Type: | 2 P-Channel |
| Typical Turn-Off Delay Time: | 50 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 1 V |
Техническая документация
Datasheet
pdf, 160 КБ
