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N/P-Channel-Channel MOSFET, 6 A, 20 V PowerPAK ChipFET SI5517DU-T1-GE3

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1 830 ֏

Кратность заказа 5 шт.

Добавить в корзину 5 шт. на сумму 9 150 ֏

Номенклатурный номер: 8030793612

Бренд: VISHAY INTERTECHNOLOGY INC.

Описание

Semiconductors\Discrete Semiconductors\MOSFETs

The Vishay Semiconductor Nand P-channel 20 V (D-S) mosfet 6A 8.3W surface mount its applications are complementary mosfet for portable devices ideal for buck-boost circuits.

Технические параметры

Channel Type	N, P
Maximum Continuous Drain Current	6 A
Maximum Drain Source Voltage	20 V
Mounting Type	Surface Mount
Package Type	PowerPAK ChipFET
EU RoHS	Compliant
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Configuration	Dual Dual Drain
Channel Mode	Enhancement
Number of Elements per Chip	2
Maximum Drain Source Voltage (V)	20
Maximum Gate Source Voltage (V)	±8
Maximum Continuous Drain Current (A)	7.2@N Channel\|4.6@P Channel
Maximum Drain Source Resistance (mOhm)	72@4.5V@P Channel\|39@4.5V@N Channel
Typical Gate Charge @ Vgs (nC)	5.5@4.5V@P Channel\|6@4.5V@N Channel\|9.1@8V\|10.5@8V
Typical Input Capacitance @ Vds (pF)	520@10V@N Channel\|455@10V@P Channel
Maximum Power Dissipation (mW)	2300
Typical Fall Time (ns)	10@N Channel\|55@P Channel
Typical Rise Time (ns)	65@N Channel\|35@P Channel
Typical Turn-Off Delay Time (ns)	40@P Channel\|40@N Channel
Typical Turn-On Delay Time (ns)	20@N Channel\|8@P Channel
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Packaging	Tape and Reel
Automotive	No
Standard Package Name	Chip FET
Pin Count	8
Supplier Package	PowerPAK ChipFET
Military	No
Mounting	Surface Mount
Package Height	0.8(Max)
Package Length	3
Package Width	1.9
PCB changed	8
Lead Shape	No Lead