P-Channel MOSFET, 4.7 A, 20 V, 3-Pin SOT-23 SI2365EDS-T1-GE3
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 4.7 A |
| Maximum Drain Source Resistance | 67.5 mΩ |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | -8 V, +8 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.7 W |
| Minimum Gate Threshold Voltage | 0.4V |
| Minimum Operating Temperature | -50 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 23.8 nC @ 8 V |
| Width | 1.4mm |
| Case | SOT23 |
| Drain current | -4.5A |
| Drain-source voltage | -20V |
| Features of semiconductor devices | ESD protected gate |
| Gate charge | 36nC |
| Gate-source voltage | ±8V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | VISHAY |
| Mounting | SMD |
| On-state resistance | 32mΩ |
| Polarisation | unipolar |
| Power dissipation | 1.1W |
| Pulsed drain current | -20A |
| Type of transistor | P-MOSFET |
