Diodes Inc ZTX851 NPN Transistor, 5 A, 60 V, 3-Pin TO-92

Фото 1/4 Diodes Inc ZTX851 NPN Transistor, 5 A, 60 V, 3-Pin TO-92
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620 ֏
Кратность заказа 4000 шт.
4000 шт. на сумму 2 480 000 ֏
Номенклатурный номер: 8030794880
Бренд: DIODES INC.

Описание

Semiconductors\Discrete Semiconductors\Bipolar Transistors
BIPOLAR TRANSISTOR, NPN, 60V, Transistor Polarity:NPN, Collector Emitter Voltage V(br)ceo:60V, Transition Frequency ft:130MHz, Power Dissipation Pd:1.2W, DC Collector Current:5A, DC Current Gain hFE:200hFE, No. of Pins:3Pins, MSL:- , RoHS Compliant: Yes

Технические параметры

Maximum Collector Base Voltage 150 V
Maximum Collector Emitter Voltage 60 V
Maximum DC Collector Current 5 A
Maximum Emitter Base Voltage 6 V
Maximum Operating Frequency 130 MHz
Maximum Operating Temperature +150 °C
Maximum Power Dissipation 1.2 W
Minimum DC Current Gain 100
Mounting Type Through Hole
Number of Elements per Chip 1
Package Type TO-92
Pin Count 3
Transistor Configuration Single
Transistor Type NPN
Transistor Polarity NPN; Collector Emitter Voltage V(br)ceo
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 150 V
Collector- Emitter Voltage VCEO Max: 60 V
Collector-Emitter Saturation Voltage: 250 mV
Configuration: Single
Continuous Collector Current: 5 A
Emitter- Base Voltage VEBO: 6 V
Factory Pack Quantity: Factory Pack Quantity: 4000
Gain Bandwidth Product fT: 130 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 5 A
Maximum Operating Temperature: +200 C
Minimum Operating Temperature: -55 C
Mounting Style: Through Hole
Package/Case: TO-92-3
Packaging: Bulk
Pd - Power Dissipation: 1.2 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
REACH - SVHC: Details
Series: ZTX851
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Case TO92
Collector current 5A
Collector-emitter voltage 60V
Current gain 25…300
Frequency 130MHz
Kind of package bulk
Manufacturer DIODES INCORPORATED
Mounting THT
Polarisation bipolar
Power dissipation 1.2W
Type of transistor NPN

Техническая документация

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