IPW60R099P6XKSA1, Транзистор N-МОП, полевой, 600В, 37,9А, 278Вт, PG-TO247
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Описание
MOSFET, N-CH, 600V, 37.9A, TO-247, Transistor Polarity:N Channel, Continuous Drain Current Id:37.9A, Drain Source Voltage Vds:600V, On Resistance Rds(on):0.089ohm, Rds(on) Test Voltage Vgs:10V, Threshold Voltage Vgs:4V, Power , RoHS Compliant: Yes
Технические параметры
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current - (A) | 37.9 |
| Maximum Drain Source Resistance - (mOhm) | 99@10V |
| Maximum Drain Source Voltage - (V) | 600 |
| Maximum Gate Source Voltage - (V) | 20 |
| Maximum Gate Threshold Voltage - (V) | 4.5 |
| Maximum Power Dissipation - (mW) | 278000 |
| Military | No |
| Number of Elements per Chip | 1 |
| Operating Temperature - (??C) | -55~150 |
| Packaging | Tube |
| Pin Count | 3 |
| Standard Package Name | TO-247 |
| Supplier Package | TO-247 |
| Typical Gate Charge @ 10V - (nC) | 70 |
| Typical Gate Charge @ Vgs - (nC) | 70@10V |
| Typical Input Capacitance @ Vds - (pF) | 3330@100V |
| Case | PG-TO247-3 |
| Drain current | 37.9A |
| Drain-source voltage | 600V |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | INFINEON TECHNOLOGIES |
| Mounting | THT |
| On-state resistance | 99mΩ |
| Polarisation | unipolar |
| Power dissipation | 278W |
| Technology | CoolMOS™ P6 |
| Type of transistor | N-MOSFET |
| Maximum Continuous Drain Current | 109 A |
| Maximum Drain Source Resistance | 0.099 O |
| Maximum Drain Source Voltage | 650 V |
| Maximum Gate Threshold Voltage | 4..5V |
| Mounting Type | Through Hole |
| Package Type | TO-247 |
| Series | CoolMOS P6 |
| Вес, г | 8.157 |
Техническая документация
Datasheet
pdf, 2269 КБ
