BGB707L7ESDE6327XTSA1 , RF Amplifier Low Noise, 31.5 dB 5.6 GHz TSLP-7-1

Фото 1/2 BGB707L7ESDE6327XTSA1 , RF Amplifier Low Noise, 31.5 dB 5.6 GHz TSLP-7-1
Изображения служат только для ознакомления,
см. техническую документацию
1 850 ֏
Кратность заказа 5 шт.
5 шт. на сумму 9 250 ֏
Номенклатурный номер: 8030973496

Описание

Semiconductors\Amplifiers & Comparators\RF Amplifiers ICs
The Infineon LNA MMIC with integrated ESD protection and active biasing is a high performance low noise amplifier MMIC based on Infineon’s silicon germanium carbon bipolar technology.

Технические параметры

Amplifier Type Low Noise
Maximum Operating Frequency 5.6 GHz
Package Type TSLP-7-1
Typical Noise Figure 0.4dB
Typical Output Power 100mW
Typical Power Gain 31.5 dB
Automotive Yes
ECCN (US) EAR99
EU RoHS Compliant
Lead Shape No Lead
Manufacturer Type MMIC Amplifier
Maximum Input Return Loss (dB) 7.5(Typ)100MHz
Maximum Operating Frequency (MHz) 10000
Maximum Operating Supply Voltage (V) 4
Maximum Operating Temperature (°C) 150
Maximum Output Return Loss (dB) 14.5(Typ)100MHz
Maximum Power Dissipation (mW) 100
Maximum Single Supply Voltage (V) 4
Maximum Supply Current (mA) 10(Typ)3V
Minimum Single Supply Voltage (V) 1.8
Mounting Surface Mount
Number of Channels per Chip 1
Packaging Tape and Reel
Part Status Active
PCB changed 6
Pin Count 6
Power Supply Type Single
PPAP Unknown
Standard Package Name TSLP
Supplier Package TSLP EP
Typical Noise Figure (dB) 2 10000MHz
Typical Output Intercept Point (dBm) 19.5 10000MHz
Typical Output Power (dBm) 6 10000MHz
Typical Power Gain (dB) 15.5 10000MHz
Typical Single Supply Voltage (V) 3
Maximum Operating Supply Voltage - (V) 4
Maximum Supply Current - (mA) 10(Typ)@3V
Military No
Operating Temperature - (??C) 150
Typical Noise Figure - (dB) 2@10000MHz
Typical Output Power Range - (dBm) 4 to 10
Typical Power Gain - (dB) 15.5@10000MHz

Техническая документация

Datasheet
pdf, 860 КБ
Документация
pdf, 846 КБ