IKB10N60TATMA1 Single Collector, Single Emitter, Single Gate IGBT, 30 A 600 V TO-263-3
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Infineon IGBT discrete with anti parallel diode in TO-263 package. It has significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and field stop concept.
Технические параметры
Configuration | Single Collector, Single Emitter, Single Gate |
Maximum Collector Emitter Voltage | 600 V |
Maximum Continuous Collector Current | 30 A |
Maximum Gate Emitter Voltage | 20V |
Maximum Power Dissipation | 110 W |
Number of Transistors | 1 |
Package Type | TO-263-3 |
Brand | Infineon Technologies |
Collector- Emitter Voltage VCEO Max | 600 V |
Collector-Emitter Saturation Voltage | 1.8 V |
Continuous Collector Current at 25 C | 24 A |
Continuous Collector Current Ic Max | 18 A |
Factory Pack Quantity | 1000 |
Gate-Emitter Leakage Current | 100 nA |
Height | 4.57 mm |
Length | 10.31 mm |
Manufacturer | Infineon |
Maximum Operating Temperature | +175 C |
Minimum Operating Temperature | -40 C |
Mounting Style | SMD/SMT |
Package / Case | TO-263-3 |
Packaging | Reel |
Part # Aliases | IKB10N60T IKB10N60TXT SP000014833 |
Pd - Power Dissipation | 110 W |
Product Category | IGBT Transistors |
RoHS | Details |
Series | XKB10N60 |
Technology | Si |
Width | 9.45 mm |
Collector Emitter Saturation Voltage | 1.5В |
Collector Emitter Voltage Max | 600В |
Continuous Collector Current | 24А |
Power Dissipation | 110Вт |
Количество Выводов | 3вывод(-ов) |
Линейка Продукции | TRENCHSTOP IGBT3 |
Максимальная Рабочая Температура | 175°C |
Монтаж транзистора | Surface Mount |
Стиль Корпуса Транзистора | TO-263(D2PAK) |
Техническая документация
Datasheet IKB10N60TATMA1
pdf, 637 КБ
Документация
pdf, 633 КБ