P-Channel MOSFET, 200 V TO-92 TP0620N3-G
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Microchip P-Channel low threshold, enhancement-mode (normally-off) MOSFET utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process.
Технические параметры
| Channel Type | P |
| Maximum Drain Source Voltage | 200 V |
| Mounting Type | Through Hole |
| Package Type | TO-92 |
| Base Product Number | TP0620 -> |
| Current - Continuous Drain (Id) @ 25В°C | 175mA (Tj) |
| Drain to Source Voltage (Vdss) | 200V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| ECCN | EAR99 |
| FET Type | P-Channel |
| HTSUS | 8541.29.0095 |
| Input Capacitance (Ciss) (Max) @ Vds | 150pF @ 25V |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Operating Temperature | -55В°C ~ 150В°C (TJ) |
| Package | Bulk |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| PCN Packaging | http://www.microchip.com/mymicrochip/NotificationD |
| Power Dissipation (Max) | 1W (Ta) |
| Rds On (Max) @ Id, Vgs | 12Ohm @ 200mA, 10V |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Supplier Device Package | TO-92-3 |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | В±20V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Continuous Drain Current (Id) | 175mA |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 12Ω@200mA, 10V |
| Drain Source Voltage (Vdss) | 200V |
| Gate Threshold Voltage (Vgs(th)@Id) | 2.4V@1mA |
| Input Capacitance (Ciss@Vds) | 150pF@25V |
| Power Dissipation (Pd) | 1W |
| Type | P Channel |
Техническая документация
Datasheet TP0620N3-G
pdf, 301 КБ
