IGP06N60TXKSA1 IGBT, 1899-12-31 06:00:00 600 V, 3-Pin TO-220, Surface Mount
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Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Infineon IGBT3 in a TO220 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench cell and fieldstop concept.
Технические параметры
| Channel Type | N |
| Maximum Collector Emitter Voltage | 600 V |
| Maximum Continuous Collector Current | 1899-12-31 06:00:00 |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Power Dissipation | 88 W |
| Mounting Type | Surface Mount |
| Number of Transistors | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Case | TO220-3 |
| Collector current | 6A |
| Collector-emitter voltage | 600V |
| Gate-emitter voltage | ±20V |
| Kind of package | tube |
| Manufacturer | INFINEON TECHNOLOGIES |
| Mounting | THT |
| Power dissipation | 88W |
| Type of transistor | IGBT |
Техническая документация
Datasheet
pdf, 489 КБ
