QRD1113
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см. техническую документацию
см. техническую документацию
2 470 ֏
от 2 шт. —
2 120 ֏
1 шт.
на сумму 2 470 ֏
Описание
The QRD1113/14 reflective sensor consists of an infrared emitting diode and an NPN silicon photo darlington mounted side by side in a black plastic housing.
Технические параметры
| Collector Current | 0.3(Minimum)mA |
| Collector Emitter Voltage | 30V |
| Emitter Collector Voltage | 5V |
| Maximum Dark Current | 100nA |
| Maximum Wavelength Detected | 940nm |
| Mounting Type | Through Hole |
| Number of Channels | 1 |
| Number of Pins | 4 |
| Output Signal Type | Phototransistor |
| Package Type | Custom 4L |
| Saturation Voltage | 0.4V |
| Spectral Range of Sensitivity | 940 nm |
| Spectrums Detected | Infrared |
| Typical Fall Time | 50µs |
| Typical Rise Time | 10µs |
| Width | 6.1mm |
| Вес, г | 0.3 |
Техническая документация
Datasheet
pdf, 743 КБ
