Bipolar junction transistor, NPN, 300 mA, 400 V, THT, e-line, ZTX458
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
1 240 ֏
от 10 шт. —
840 ֏
от 100 шт. —
660 ֏
1 шт.
на сумму 1 240 ֏
Описание
Semiconductors\Power Semiconductors\Bipolar Transistors
Технические параметры
| Brand: | Diodes Incorporated |
| Collector- Base Voltage VCBO: | 400 V |
| Collector- Emitter Voltage VCEO Max: | 400 V |
| Collector-Emitter Saturation Voltage: | 500 mV |
| Configuration: | Single |
| Continuous Collector Current: | 300 mA |
| Emitter- Base Voltage VEBO: | 5 V |
| Factory Pack Quantity: Factory Pack Quantity: | 4000 |
| Gain Bandwidth Product fT: | 50 MHz |
| Manufacturer: | Diodes Incorporated |
| Maximum DC Collector Current: | 300 mA |
| Maximum Operating Temperature: | +200 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Package / Case: | TO-92-3 |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 1 W |
| Product Category: | Bipolar Transistors-BJT |
| Product Type: | BJTs-Bipolar Transistors |
| Series: | ZTX458 |
| Subcategory: | Transistors |
| Technology: | Si |
| Transistor Polarity: | NPN |
Техническая документация
Datasheet
pdf, 57 КБ
