DMG1012UW-7, Транзистор МОП n-канальный, полевой, 20В, 1А, 290мВт, SOT323
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196 ֏
67 ֏
от 10 шт. —
63 ֏
1 шт.
на сумму 67 ֏
Описание
Транзисторы
DMx Enhancement Mode MOSFETsDiodes Incorporated DMx series enhancement mode MOSFETs feature low on-resistance and fast switching, making them ideal for high efficiency power management applications. Diodes Incorporated DMx enhancement mode MOSFETs are also optimized for motor control, backlighting, and DC-DC converter applications. Diodes Incorporated DMx series includes complementary dual, complementary pair, P-channel, and N-channel enhancement mode MOSFETs.
Технические параметры
Brand | Diodes Incorporated |
Channel Mode | Enhancement |
Configuration | Single |
Factory Pack Quantity | 3000 |
Fall Time | 12.3 ns |
Id - Continuous Drain Current | 1 A |
Manufacturer | Diodes Incorporated |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Number Of Channels | 1 Channel |
Package / Case | SOT-323-3 |
Packaging | Cut Tape or Reel |
Pd - Power Dissipation | 290 mW |
Product | MOSFET Small Signal |
Product Category | MOSFET |
Product Type | MOSFET |
Qg - Gate Charge | 736.6 pC |
Rds On - Drain-Source Resistance | 450 mOhms |
Rise Time | 7.4 ns |
Series | DMG1012 |
Subcategory | MOSFETs |
Technology | Si |
Transistor Polarity | N-Channel |
Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 26.7 ns |
Typical Turn-On Delay Time | 5.1 ns |
Vds - Drain-Source Breakdown Voltage | 20 V |
Vgs - Gate-Source Voltage | 4.5 V |
Vgs Th - Gate-Source Threshold Voltage | 500 mV |
Channel Type | N |
Maximum Continuous Drain Current | 1 A |
Maximum Drain Source Resistance | 750 mΩ |
Maximum Drain Source Voltage | 20 V |
Maximum Gate Source Voltage | -6 V, +6 V |
Maximum Gate Threshold Voltage | 1V |
Maximum Power Dissipation | 290 mW |
Mounting Type | Surface Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-323 |
Pin Count | 3 |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 0.737 nC @ 4.5 V |
Width | 1.35mm |
Brand: | Diodes Incorporated |
Channel Mode: | Enhancement |
Configuration: | Single |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Fall Time: | 12.3 ns |
Id - Continuous Drain Current: | 1 A |
Manufacturer: | Diodes Incorporated |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Number of Channels: | 1 Channel |
Package / Case: | SOT-323-3 |
Pd - Power Dissipation: | 290 mW |
Product Category: | MOSFET |
Product Type: | MOSFET |
Product: | MOSFET Small Signal |
Qg - Gate Charge: | 736.6 pC |
Rds On - Drain-Source Resistance: | 450 mOhms |
Rise Time: | 7.4 ns |
Series: | DMG1012 |
Subcategory: | MOSFETs |
Technology: | Si |
Transistor Polarity: | N-Channel |
Transistor Type: | 1 N-Channel |
Typical Turn-Off Delay Time: | 26.7 ns |
Typical Turn-On Delay Time: | 5.1 ns |
Vds - Drain-Source Breakdown Voltage: | 20 V |
Vgs - Gate-Source Voltage: | -6 V, +6 V |
Vgs th - Gate-Source Threshold Voltage: | 500 mV |
Вес, г | 0.02 |
Техническая документация
Datasheet
pdf, 172 КБ
Datasheet
pdf, 1680 КБ
Datasheet DMG1012UW-7
pdf, 420 КБ
Datasheet DMG1012UW-7
pdf, 166 КБ