ZXT10N50DE6TA, Биполярный транзистор NPN 50В 3A SOT23-6

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234 ֏
Мин. кол-во для заказа 9 шт.
от 29 шт.203 ֏
от 58 шт.190 ֏
от 116 шт.181 ֏
9 шт. на сумму 2 106 ֏
Номенклатурный номер: 8032641087
Бренд: DIODES INC.

Описание

Транзисторы / Биполярные транзисторы / Одиночные биполярные транзисторы
Биполярный транзистор NPN 50В 3A SOT23-6

Технические параметры

Корпус SOT-26
EU RoHS Compliant
ECCN (US) EAR99
Part Status Active
HTS 8541.29.00.75
Type NPN
Product Category Bipolar Power
Material Si
Configuration Single Quad Collector
Number of Elements per Chip 1
Maximum Collector Base Voltage (V) 50
Maximum Collector-Emitter Voltage (V) 50
Maximum Emitter Base Voltage (V) 5
Maximum Base Emitter Saturation Voltage (V) 1@100mA@3A
Maximum Collector-Emitter Saturation Voltage (V) 0.2@10mA@1A|0.3@100mA@3A|0.2@50mA@2A|0.02@10mA@0.1A
Maximum DC Collector Current (A) 3
Minimum DC Current Gain 100@2A@2V|200@1A@2V|300@200mA@2V|200@10mA@2V
Maximum Power Dissipation (mW) 1700
Maximum Transition Frequency (MHz) 165(Typ)
Minimum Operating Temperature (°C) -55
Maximum Operating Temperature (°C) 150
Packaging Tape and Reel
Automotive No
Standard Package Name SOT-23
Pin Count 6
Supplier Package SOT-23
Military No
Mounting Surface Mount
Package Height 1.3(Max)
Package Length 3.1(Max)
Package Width 1.8(Max)
PCB changed 6
Lead Shape Gull-wing
Base Product Number ZXT10N50D ->
Current - Collector (Ic) (Max) 3A
Current - Collector Cutoff (Max) 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 2A, 2V
ECCN EAR99
Frequency - Transition 165MHz
HTSUS 8541.29.0075
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C (TJ)
Package Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ®
Package / Case SOT-23-6
Power - Max 1.1W
REACH Status REACH Unaffected
RoHS Status ROHS3 Compliant
Supplier Device Package SOT-23-6
Transistor Type NPN
Vce Saturation (Max) @ Ib, Ic 300mV @ 100mA, 3A
Voltage - Collector Emitter Breakdown (Max) 50V
Brand: Diodes Incorporated
Collector- Base Voltage VCBO: 50 V
Collector- Emitter Voltage VCEO Max: 50 V
Collector-Emitter Saturation Voltage: 225 mV
Configuration: Single
Continuous Collector Current: 3 A
Emitter- Base Voltage VEBO: 5 V
Factory Pack Quantity: Factory Pack Quantity: 3000
Gain Bandwidth Product fT: 165 MHz
Manufacturer: Diodes Incorporated
Maximum DC Collector Current: 3 A
Maximum Operating Temperature: +150 C
Minimum Operating Temperature: -55 C
Mounting Style: SMD/SMT
Package / Case: SOT-23-6
Pd - Power Dissipation: 1.1 W
Product Category: Bipolar Transistors-BJT
Product Type: BJTs-Bipolar Transistors
Series: ZXT10N50
Subcategory: Transistors
Technology: Si
Transistor Polarity: NPN
Вес, г 0.03

Техническая документация

Datasheet ZXT10N50DE6TA
pdf, 350 КБ
Datasheet ZXT10N50DE6TA
pdf, 335 КБ