N-Channel MOSFET, 65 A, 40 V, 8-Pin PowerPAK 1212-8PT SI7116BDN-T1-GE3
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1 430 ֏
Кратность заказа 10 шт.
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на сумму 14 300 ֏
Описание
Semiconductors\Discrete Semiconductors\MOSFETs
The Vishay TrenchFET N-Channel power MOSFET is use for DC/DC primary side switch, Telecom / server, Motor drive control and Synchronous rectification.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 65 A |
| Maximum Drain Source Resistance | 0.0074 Ω |
| Maximum Drain Source Voltage | 40 V |
| Maximum Gate Threshold Voltage | 2.5V |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | PowerPAK 1212-8PT |
| Pin Count | 8 |
| Series | TrenchFET |
| Transistor Material | Si |
| Brand: | Vishay/Siliconix |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 80 S |
| Id - Continuous Drain Current: | 65 A |
| Manufacturer: | Vishay |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | PowerPAK-1212-8PT |
| Pd - Power Dissipation: | 62.5 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 31.4 nC |
| Rds On - Drain-Source Resistance: | 7.4 mOhms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | TrenchFET |
| Transistor Polarity: | N-Channel |
| Transistor Type: | TrenchFET Gen IV Power MOSFET |
| Typical Turn-Off Delay Time: | 25 ns |
| Typical Turn-On Delay Time: | 10 ns |
| Vds - Drain-Source Breakdown Voltage: | 40 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
