TN2106K1-G, Trans MOSFET N-CH Si 60V 0.28A 3-Pin SOT-23 T/R
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см. техническую документацию
см. техническую документацию
374 ֏
Кратность заказа 3000 шт.
от 6000 шт. —
366 ֏
от 9000 шт. —
357 ֏
3000 шт.
на сумму 1 122 000 ֏
Описание
Discrete Semiconductors\Fet Transistors\Mosfet
This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and well-proven, silicon-gate manufacturing process.
Технические параметры
| Brand: | Microchip Technology |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Fall Time: | 5 ns |
| Forward Transconductance - Min: | 150 mS |
| Id - Continuous Drain Current: | 280 mA |
| Manufacturer: | Microchip |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Pd - Power Dissipation: | 360 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signal |
| Rds On - Drain-Source Resistance: | 2.5 Ohms |
| Rise Time: | 5 ns |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Type: | FET |
| Typical Turn-Off Delay Time: | 6 ns |
| Typical Turn-On Delay Time: | 3 ns |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 600 mV |
| Automotive | No |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| ECCN (US) | EAR99 |
| EU RoHS | Compliant |
| Lead Shape | Gull-wing |
| Material | Si |
| Maximum Continuous Drain Current (A) | 0.28 |
| Maximum Drain Source Resistance (mOhm) | 2500@10V |
| Maximum Drain Source Voltage (V) | 60 |
| Maximum Gate Source Voltage (V) | ±20 |
| Maximum Gate Threshold Voltage (V) | 2 |
| Maximum Operating Temperature (°C) | 150 |
| Maximum Power Dissipation (mW) | 360 |
| Minimum Operating Temperature (°C) | -55 |
| Mounting | Surface Mount |
| Number of Elements per Chip | 1 |
| Packaging | Tape and Reel |
| Part Status | Active |
| PCB changed | 3 |
| Pin Count | 3 |
| PPAP | No |
| Process Technology | DMOS |
| Product Category | Power MOSFET |
| Standard Package Name | SOT |
| Supplier Package | SOT-23 |
| Typical Fall Time (ns) | 5 |
| Typical Input Capacitance @ Vds (pF) | 35@25V |
| Typical Output Capacitance (pF) | 17 |
| Typical Rise Time (ns) | 5 |
| Typical Turn-Off Delay Time (ns) | 6 |
| Typical Turn-On Delay Time (ns) | 3 |
| Forward Diode Voltage | 1.8V |
| Maximum Continuous Drain Current | 280 mA |
| Maximum Drain Source Resistance | 5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 2V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 360 mW |
| Minimum Gate Threshold Voltage | 0.6V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Package Type | TO-236 |
| Series | TN2106 |
| Transistor Configuration | Single |
| Width | 1.4mm |
