2N7002, Транзистор МОП n-канальный, полевой, 60В, 800мА, 200мВт, SOT23
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Описание
Транзисторы
Enhancement Mode Field Effect Transistors (FET) are produced using Fairchild’s proprietary, high cell density, DMOS technology.
Технические параметры
| Вид | MOSFET |
| Тип | полевой |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 115 mA |
| Maximum Drain Source Resistance | 7.5 Ω |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 200 mW |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Width | 1.3mm |
| Current - Continuous Drain (Id) @ 25°C | 115mA(Ta) |
| Drain to Source Voltage (Vdss) | 60V |
| Family | Transistors-FETs, MOSFETs-Single |
| FET Feature | Standard |
| FET Type | MOSFET N-Channel, Metal Oxide |
| Gate Charge (Qg) @ Vgs | - |
| Input Capacitance (Ciss) @ Vds | 50pF @ 25V |
| Manufacturer | Fairchild Semiconductor |
| Operating Temperature | -55°C ~ 150°C(TJ) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Digi-Reel® |
| Part Status | Active |
| Power - Max | 200mW |
| Rds On (Max) @ Id, Vgs | 7.5 Ohm @ 500mA, 10V |
| Series | - |
| Standard Package | 1 |
| Supplier Device Package | SOT-23(TO-236AB) |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Brand: | onsemi/Fairchild |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 3000 |
| Forward Transconductance - Min: | 0.08 S |
| Id - Continuous Drain Current: | 115 mA |
| Manufacturer: | onsemi |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | SMD/SMT |
| Number of Channels: | 1 Channel |
| Package / Case: | SOT-23-3 |
| Part # Aliases: | 2N7002_NL |
| Pd - Power Dissipation: | 350 mW |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Product: | MOSFET Small Signals |
| Rds On - Drain-Source Resistance: | 7.5 Ohms |
| Series: | 2N7002 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Transistor Polarity: | N-Channel |
| Transistor Type: | 1 N-Channel |
| Vds - Drain-Source Breakdown Voltage: | 60 V |
| Vgs - Gate-Source Voltage: | -20 V, +20 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.5 V |
| Вес, г | 0.32 |
Техническая документация
2N7002 datasheet
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