IKP39N65ES5XKSA1 Single IGBT, 62 A 650 V, 3-Pin PG-TO220
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см. техническую документацию
см. техническую документацию
5 600 ֏
Кратность заказа 5 шт.
Добавить в корзину 5 шт.
на сумму 28 000 ֏
Описание
Semiconductors\Discrete Semiconductors\IGBTs
The Infineon IKP39N65ES5 has highest power density in TO-220 footprint and no need for gate clamping component.
Технические параметры
| Channel Type | N |
| Configuration | Single |
| Maximum Collector Emitter Voltage | 650 V |
| Maximum Continuous Collector Current | 62 A |
| Maximum Gate Emitter Voltage | 30V |
| Maximum Power Dissipation | 188 W |
| Number of Transistors | 1 |
| Package Type | PG-TO220 |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 650 V |
| Collector-Emitter Saturation Voltage: | 1.45 V |
| Configuration: | Single |
| Continuous Collector Current at 25 C: | 62 A |
| Factory Pack Quantity: | 500 |
| Gate-Emitter Leakage Current: | 100 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | -20 V, 20 V |
| Maximum Operating Temperature: | +175 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Through Hole |
| Package/Case: | TO-220-2 |
| Packaging: | Tube |
| Part # Aliases: | IKP39N65ES5 SP002882512 |
| Pd - Power Dissipation: | 188 W |
| Product Category: | IGBT Transistors |
| Product Type: | IGBT Transistors |
| Subcategory: | IGBTs |
| Technology: | Si |
Техническая документация
Datasheet
pdf, 1927 КБ
Datasheet IKP39N65ES5XKSA1
pdf, 1994 КБ
