IRF9530SPBF, Транзистор полевой MOSFET P-канальный 100В 12А 88Вт, 0.3 Ом
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET P-канальный 100В 12А 88Вт, 0.3 Ом
Технические параметры
Корпус | D2Pak(TO-263) | |
Automotive | No | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Single | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant with Exemption | |
Lead Shape | Gull-wing | |
Maximum Continuous Drain Current (A) | 12 | |
Maximum Diode Forward Voltage (V) | 6.3 | |
Maximum Drain Source Resistance (mOhm) | 300 10V | |
Maximum Drain Source Voltage (V) | 100 | |
Maximum Gate Resistance (Ohm) | 3.3 | |
Maximum Gate Source Leakage Current (nA) | 100 | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Gate Threshold Voltage (V) | 4 | |
Maximum IDSS (uA) | 100 | |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 40 | |
Maximum Operating Temperature (°C) | 175 | |
Maximum Positive Gate Source Voltage (V) | 20 | |
Maximum Power Dissipation (mW) | 3700 | |
Maximum Power Dissipation on PCB @ TC=25°C (W) | 3.7 | |
Maximum Pulsed Drain Current @ TC=25°C (A) | 48 | |
Minimum Gate Resistance (Ohm) | 0.4 | |
Minimum Gate Threshold Voltage (V) | 2 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Surface Mount | |
Number of Elements per Chip | 1 | |
Operating Junction Temperature (°C) | -55 to 175 | |
Part Status | Active | |
PCB changed | 2 | |
Pin Count | 3 | |
PPAP | No | |
Product Category | Power MOSFET | |
Standard Package Name | TO-263 | |
Supplier Package | D2PAK | |
Tab | Tab | |
Typical Fall Time (ns) | 39 | |
Typical Gate Charge @ 10V (nC) | 38(Max) | |
Typical Gate Charge @ Vgs (nC) | 38(Max)10V | |
Typical Gate Plateau Voltage (V) | 6.8 | |
Typical Gate to Drain Charge (nC) | 21(Max) | |
Typical Gate to Source Charge (nC) | 6.8(Max) | |
Typical Input Capacitance @ Vds (pF) | 860 25V | |
Typical Output Capacitance (pF) | 340 | |
Typical Reverse Recovery Charge (nC) | 460 | |
Typical Reverse Recovery Time (ns) | 120 | |
Typical Reverse Transfer Capacitance @ Vds (pF) | 93 25V | |
Typical Rise Time (ns) | 52 | |
Typical Turn-Off Delay Time (ns) | 31 | |
Typical Turn-On Delay Time (ns) | 12 | |
Maximum Continuous Drain Current | 12 A | |
Maximum Drain Source Resistance | 300 mΩ | |
Maximum Drain Source Voltage | 100 V | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +175 °C | |
Maximum Power Dissipation | 3.7 W | |
Minimum Gate Threshold Voltage | 2V | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Package Type | D2PAK(TO-263) | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 38 nC @ 10 V | |
Width | 9.02mm | |
Brand | Vishay Semiconductors | |
Factory Pack Quantity | 800 | |
Height | 4.83 mm | |
Length | 10.67 mm | |
Manufacturer | Vishay | |
Package / Case | TO-263-3 | |
Packaging | Reel | |
RoHS | Details | |
Technology | Si | |
Unit Weight | 0.050717 oz | |
Вес, г | 1.35 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet
pdf, 139 КБ
Datasheet IRF9530SPBF
pdf, 209 КБ
Документация
pdf, 177 КБ