SI2304DDS-T1-GE3, Транзистор полевой MOSFET N-канальный 30В 3.3А 1.7Вт
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Мин. кол-во для заказа 34 шт.
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 30В 3.3А 1.7Вт
Технические параметры
Корпус | SOT-23-3(TO-236) | |
EU RoHS | Compliant | |
ECCN (US) | EAR99 | |
Part Status | Active | |
HTS | 8541.29.00.95 | |
Product Category | Power MOSFET | |
Process Technology | TrenchFET | |
Configuration | Single | |
Channel Mode | Enhancement | |
Channel Type | N | |
Number of Elements per Chip | 1 | |
Maximum Drain Source Voltage (V) | 30 | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Continuous Drain Current (A) | 3.3 | |
Maximum Drain Source Resistance (mOhm) | 60@10V | |
Typical Gate Charge @ Vgs (nC) | 2.1@4.5V|4.5@10V | |
Typical Gate Charge @ 10V (nC) | 4.5 | |
Typical Input Capacitance @ Vds (pF) | 235@15V | |
Maximum Power Dissipation (mW) | 1100 | |
Typical Fall Time (ns) | 22 | |
Typical Rise Time (ns) | 50 | |
Typical Turn-Off Delay Time (ns) | 12 | |
Typical Turn-On Delay Time (ns) | 12 | |
Minimum Operating Temperature (°C) | -55 | |
Maximum Operating Temperature (°C) | 150 | |
Packaging | Tape and Reel | |
Automotive | No | |
Supplier Package | SOT-23 | |
Pin Count | 3 | |
Standard Package Name | SOT-23 | |
Military | No | |
Mounting | Surface Mount | |
Package Height | 1.02(Max) | |
Package Length | 3.04(Max) | |
Package Width | 1.4(Max) | |
PCB changed | 3 | |
Lead Shape | Gull-wing | |
Continuous Drain Current (Id) @ 25В°C | 3.3A | |
Power Dissipation-Max (Ta=25В°C) | 1.1W | |
Rds On - Drain-Source Resistance | 60mО© @ 3.2A,10V | |
Transistor Polarity | N Channel | |
Vds - Drain-Source Breakdown Voltage | 30V | |
Vgs - Gate-Source Voltage | 2.2V @ 250uA | |
Brand: | Vishay Semiconductors | |
Channel Mode: | Enhancement | |
Configuration: | Single | |
Factory Pack Quantity: Factory Pack Quantity: | 3000 | |
Fall Time: | 5 ns | |
Id - Continuous Drain Current: | 3.6 A | |
Manufacturer: | Vishay | |
Maximum Operating Temperature: | +150 C | |
Minimum Operating Temperature: | -55 C | |
Mounting Style: | SMD/SMT | |
Number of Channels: | 1 Channel | |
Package / Case: | SOT-23-3 | |
Part # Aliases: | SI2304DDS-T1-BE3 SI2304DDS-GE3 | |
Pd - Power Dissipation: | 1.7 W | |
Product Category: | MOSFET | |
Product Type: | MOSFET | |
Qg - Gate Charge: | 6.7 nC | |
Rds On - Drain-Source Resistance: | 60 mOhms | |
Rise Time: | 12 ns | |
Series: | SI2 | |
Subcategory: | MOSFETs | |
Technology: | Si | |
Tradename: | TrenchFET | |
Transistor Polarity: | N-Channel | |
Transistor Type: | 1 N-Channel | |
Typical Turn-Off Delay Time: | 10 ns | |
Typical Turn-On Delay Time: | 5 ns | |
Vds - Drain-Source Breakdown Voltage: | 30 V | |
Vgs - Gate-Source Voltage: | -20 V, +20 V | |
Vgs th - Gate-Source Threshold Voltage: | 1.2 V | |
Maximum Continuous Drain Current | 3.6 A | |
Maximum Drain Source Resistance | 75 mΩ | |
Maximum Drain Source Voltage | 30 V | |
Maximum Gate Source Voltage | -20 V, +20 V | |
Maximum Operating Temperature | +150 °C | |
Maximum Power Dissipation | 1.7 W | |
Minimum Gate Threshold Voltage | 1.2V | |
Minimum Operating Temperature | -55 °C | |
Mounting Type | Surface Mount | |
Package Type | SOT-23 | |
Transistor Configuration | Single | |
Transistor Material | Si | |
Typical Gate Charge @ Vgs | 4.5 nC @ 10 V | |
Width | 1.4mm | |
Вес, г | 0.04 |
Техническая документация
Datasheet
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Datasheet SI2304DDS-T1-GE3
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