Корпус	DPAK/TO-252AA
EU RoHS	Compliant with Exemption
ECCN (US)	EAR99
Part Status	Active
HTS	8541.29.00.95
Product Category	Power MOSFET
Material	Si
Configuration	Single
Channel Mode	Enhancement
Channel Type	P
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	250
Maximum Gate Source Voltage (V)	±20
Maximum Gate Threshold Voltage (V)	4
Maximum Continuous Drain Current (A)	2.7
Maximum Gate Source Leakage Current (nA)	100
Maximum IDSS (uA)	100
Maximum Drain Source Resistance (mOhm)	3000@10V
Typical Gate Charge @ Vgs (nC)	14(Max)@10V
Typical Gate Charge @ 10V (nC)	14(Max)
Typical Input Capacitance @ Vds (pF)	220@25V
Maximum Power Dissipation (mW)	50000
Typical Fall Time (ns)	17
Typical Rise Time (ns)	14
Typical Turn-Off Delay Time (ns)	20
Typical Turn-On Delay Time (ns)	11
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	150
Automotive	No
Pin Count	3
Supplier Package	DPAK
Standard Package Name	TO-252
Military	No
Mounting	Surface Mount
Package Height	2.39(Max)
Package Length	6.73(Max)
Package Width	6.22(Max)
PCB changed	2
Tab	Tab
Вид монтажа	SMD/SMT
Высота	2.38 mm
Длина	6.73 mm
Категория продукта	МОП-транзистор
Подкатегория	MOSFETs
Размер фабричной упаковки	2000
Серия	IRFR/U
Технология	Si
Тип продукта	MOSFET
Торговая марка	Vishay / Siliconix
Упаковка / блок	TO-252-3
Ширина	6.22 mm
Packaging	Tape and Reel
PPAP	No
Maximum Continuous Drain Current	2.7 A
Maximum Drain Source Resistance	3 Ω
Maximum Drain Source Voltage	250 V
Maximum Gate Source Voltage	-20 V, +20 V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	50 W
Minimum Gate Threshold Voltage	2V
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Package Type	DPAK(TO-252)
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	14 nC @ 10 V
Width	6.22mm
Transistor Polarity	P Channel; Continuous Drain Current Id
Вес, г	0.4

IRFR9214TRPBF, Транзистор полевой MOSFET P-канальный 250В 2.7А 50Вт

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