IRFB17N50LPBF, Транзистор полевой MOSFET N-канальный 500В 16А, 220Вт
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Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET N-канальный 500В 16А, 220Вт
Технические параметры
Корпус | to220ab | |
Base Product Number | IRFB17 -> | |
Current - Continuous Drain (Id) @ 25В°C | 16A (Tc) | |
Drain to Source Voltage (Vdss) | 500V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
ECCN | EAR99 | |
FET Type | N-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 130nC @ 10V | |
HTSUS | 8541.29.0095 | |
Input Capacitance (Ciss) (Max) @ Vds | 2760pF @ 25V | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Type | Through Hole | |
Operating Temperature | -55В°C ~ 150В°C (TJ) | |
Other Related Documents | http://www.vishay.com/docs/88869/packaging.pdf | |
Package | Tube | |
Package / Case | TO-220-3 | |
Power Dissipation (Max) | 220W (Tc) | |
Rds On (Max) @ Id, Vgs | 320mOhm @ 9.9A, 10V | |
RoHS Status | ROHS3 Compliant | |
Supplier Device Package | TO-220AB | |
Technology | MOSFET (Metal Oxide) | |
Vgs (Max) | В±30V | |
Vgs(th) (Max) @ Id | 5V @ 250ВµA | |
FET Feature | - | |
Manufacturer | Vishay Siliconix | |
Packaging | Tube | |
Part Status | Active | |
Series | - | |
Automotive | No | |
Channel Mode | Enhancement | |
Channel Type | N | |
Configuration | Single | |
ECCN (US) | EAR99 | |
Lead Shape | Through Hole | |
Maximum Continuous Drain Current (A) | 16 | |
Maximum Drain Source Resistance (mOhm) | 320@10V | |
Maximum Drain Source Voltage (V) | 500 | |
Maximum Gate Source Voltage (V) | ±30 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Power Dissipation (mW) | 220000 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Through Hole | |
Number of Elements per Chip | 1 | |
Operating Junction Temperature (°C) | -55 to 150 | |
PCB changed | 3 | |
Pin Count | 3 | |
PPAP | No | |
Product Category | Power MOSFET | |
Standard Package Name | TO-220 | |
Supplier Package | TO-220AB | |
Tab | Tab | |
Typical Fall Time (ns) | 28 | |
Typical Gate Charge @ 10V (nC) | 130(Max) | |
Typical Gate Charge @ Vgs (nC) | 130(Max)@10V | |
Typical Input Capacitance @ Vds (pF) | 2760@25V | |
Typical Rise Time (ns) | 51 | |
Typical Turn-Off Delay Time (ns) | 50 | |
Typical Turn-On Delay Time (ns) | 21 | |
Вес, г | 2.5 |
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