N-Channel MOSFET, 115 A, 200 V, 4-Pin SOT-227 IXFN140N20P
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Описание
Semiconductors\Discrete Semiconductors\MOSFETs
N-Channel Power MOSFETs with Fast Intrinsic Diode (HiPerFET™) from IXYS A wide range of advanced discrete Power MOSFET devices from IXYSundefined
Технические параметры
Channel Mode | Enhancement |
Channel Type | N |
Maximum Continuous Drain Current | 115 A |
Maximum Drain Source Resistance | 18 mΩ |
Maximum Drain Source Voltage | 200 V |
Maximum Gate Source Voltage | -20 V, +20 V |
Maximum Gate Threshold Voltage | 5V |
Maximum Operating Temperature | +175 °C |
Maximum Power Dissipation | 680 W |
Minimum Operating Temperature | -55 °C |
Mounting Type | Screw Mount |
Number of Elements per Chip | 1 |
Package Type | SOT-227 |
Pin Count | 4 |
Series | HiperFET, Polar |
Transistor Configuration | Single |
Transistor Material | Si |
Typical Gate Charge @ Vgs | 240 nC @ 10 V |
Width | 25.42mm |
Вес, г | 193.6 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IXFN140N20P
pdf, 92 КБ