ZXTN25040DFLTA, Trans GP BJT NPN 130V 1.5A 350mW 3-Pin SOT-23 T/R
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см. техническую документацию
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132 ֏
Кратность заказа 3000 шт.
3000 шт.
на сумму 396 000 ֏
Описание
Diodes, Transistors and Thyristors\Bipolar Transistors\GP BJT
Trans GP BJT NPN 130V 1.5A 350mW 3-Pin SOT-23 T/R
Технические параметры
Automotive | No |
Configuration | Single |
ECCN (US) | EAR99 |
EU RoHS | Compliant |
Lead Shape | Gull-wing |
Maximum Base Emitter Saturation Voltage (V) | 0.95@30mA@1.5A |
Maximum Collector Base Voltage (V) | 130 |
Maximum Collector Cut-Off Current (nA) | 50 |
Maximum Collector-Emitter Voltage (V) | 130 |
Maximum DC Collector Current (A) | 1.5 |
Maximum Emitter Base Voltage (V) | 7 |
Maximum Operating Temperature (°C) | 150 |
Maximum Power Dissipation (mW) | 350 |
Maximum Transition Frequency (MHz) | 190(Typ) |
Minimum DC Current Gain | 300@10mA@2V|300@1A@2V|170@1.5A@2V|25@4A@2V |
Minimum Operating Temperature (°C) | -55 |
Mounting | Surface Mount |
Number of Elements per Chip | 1 |
Packaging | Tape and Reel |
Part Status | Active |
PCB changed | 3 |
Pin Count | 3 |
PPAP | No |
Product Category | Bipolar Small Signal |
Standard Package Name | SOT |
Supplier Package | SOT-23 |
Type | NPN |
Brand: | Diodes Incorporated |
Collector- Base Voltage VCBO: | 130 V |
Collector- Emitter Voltage VCEO Max: | 40 V |
Collector-Emitter Saturation Voltage: | 235 mV |
Configuration: | Single |
Continuous Collector Current: | 1.5 A |
DC Collector/Base Gain hfe Min: | 25 at 4 A, 2 V |
DC Current Gain hFE Max: | 900 at 10 mA, 2 V |
Emitter- Base Voltage VEBO: | 7 V |
Factory Pack Quantity: Factory Pack Quantity: | 3000 |
Gain Bandwidth Product fT: | 190 MHz |
Manufacturer: | Diodes Incorporated |
Maximum DC Collector Current: | 1.5 A |
Maximum Operating Temperature: | +150 C |
Minimum Operating Temperature: | -55 C |
Mounting Style: | SMD/SMT |
Package / Case: | SOT-23-3 |
Pd - Power Dissipation: | 350 mW |
Product Category: | Bipolar Transistors-BJT |
Product Type: | BJTs-Bipolar Transistors |
Series: | ZXTN25040 |
Subcategory: | Transistors |
Technology: | Si |
Transistor Polarity: | NPN |
Maximum Collector Base Voltage | 130 V |
Maximum Collector Emitter Voltage | 40 V |
Maximum DC Collector Current | 1.5 A |
Maximum Emitter Base Voltage | 7 V |
Maximum Operating Frequency | 190 MHz |
Maximum Operating Temperature | +150 °C |
Maximum Power Dissipation | 350 mW |
Mounting Type | Surface Mount |
Package Type | SOT-23 |
Transistor Configuration | Single |
Transistor Type | NPN |
Вес, г | 1 |
Техническая документация
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