IRFR9310TRPBF, Транзистор полевой MOSFET P-канальный 400В 1.8А 50Вт
![Фото 1/3 IRFR9310TRPBF, Транзистор полевой MOSFET P-канальный 400В 1.8А 50Вт](https://static.chipdip.ru/lib/941/DOC039941047.jpg)
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
![](https://static.chipdip.ru/lib/179/DOC007179876.jpg)
![](https://static.chipdip.ru/lib/918/DOC006918617.jpg)
720 ֏
Мин. кол-во для заказа 3 шт.
от 34 шт. —
580 ֏
от 67 шт. —
540 ֏
от 134 шт. —
510 ֏
Добавить в корзину 3 шт.
на сумму 2 160 ֏
Альтернативные предложения1
Описание
Транзисторы / Полевые транзисторы / Одиночные MOSFET транзисторы
Транзистор полевой MOSFET P-канальный 400В 1.8А 50Вт
Технические параметры
Корпус | DPAK/TO-252AA | |
Base Product Number | IRFR9310 -> | |
Current - Continuous Drain (Id) @ 25В°C | 1.8A (Tc) | |
Drain to Source Voltage (Vdss) | 400V | |
Drive Voltage (Max Rds On, Min Rds On) | 10V | |
ECCN | EAR99 | |
FET Type | P-Channel | |
Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V | |
HTSUS | 8541.29.0095 | |
Input Capacitance (Ciss) (Max) @ Vds | 270pF @ 25V | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Mounting Type | Surface Mount | |
Operating Temperature | -55В°C ~ 150В°C (TJ) | |
Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Power Dissipation (Max) | 50W (Tc) | |
Rds On (Max) @ Id, Vgs | 7Ohm @ 1.1A, 10V | |
RoHS Status | ROHS3 Compliant | |
Supplier Device Package | D-Pak | |
Technology | MOSFET (Metal Oxide) | |
Vgs (Max) | В±20V | |
Vgs(th) (Max) @ Id | 4V @ 250ВµA | |
Channel Mode | Enhancement | |
Channel Type | P | |
Configuration | Single | |
ECCN (US) | EAR99 | |
EU RoHS | Compliant with Exemption | |
Material | Si | |
Maximum Continuous Drain Current (A) | 1.8 | |
Maximum Diode Forward Voltage (V) | 4 | |
Maximum Drain Source Resistance (mOhm) | 7000 10V | |
Maximum Drain Source Voltage (V) | 400 | |
Maximum Gate Source Leakage Current (nA) | 100 | |
Maximum Gate Source Voltage (V) | ±20 | |
Maximum Gate Threshold Voltage (V) | 4 | |
Maximum IDSS (uA) | 100 | |
Maximum Junction Ambient Thermal Resistance on PCB (°C/W) | 50 | |
Maximum Operating Temperature (°C) | 150 | |
Maximum Positive Gate Source Voltage (V) | 20 | |
Maximum Power Dissipation (mW) | 50000 | |
Maximum Pulsed Drain Current @ TC=25°C (A) | 7.2 | |
Minimum Gate Threshold Voltage (V) | 2 | |
Minimum Operating Temperature (°C) | -55 | |
Mounting | Surface Mount | |
Number of Elements per Chip | 1 | |
Operating Junction Temperature (°C) | -55 to 150 | |
Packaging | Tape and Reel | |
Part Status | Active | |
PCB changed | 2 | |
Pin Count | 3 | |
Product Category | Power MOSFET | |
Standard Package Name | TO-252 | |
Supplier Package | DPAK | |
Tab | Tab | |
Typical Fall Time (ns) | 24 | |
Typical Gate Charge @ 10V (nC) | 13(Max) | |
Typical Gate Charge @ Vgs (nC) | 13(Max) 10V | |
Typical Gate Plateau Voltage (V) | 5.1 | |
Typical Gate to Drain Charge (nC) | 5(Max) | |
Typical Gate to Source Charge (nC) | 3.2(Max) | |
Typical Input Capacitance @ Vds (pF) | 270 25V | |
Typical Output Capacitance (pF) | 50 | |
Typical Reverse Recovery Charge (nC) | 640 | |
Typical Reverse Recovery Time (ns) | 170 | |
Typical Reverse Transfer Capacitance @ Vds (pF) | 8 25V | |
Typical Rise Time (ns) | 10 | |
Typical Turn-Off Delay Time (ns) | 25 | |
Typical Turn-On Delay Time (ns) | 11 | |
Вес, г | 3 |
Техническая документация
Datasheet IRFR9310TRPBF
pdf, 266 КБ
Datasheet IRFR9310TRPBF
pdf, 256 КБ