IPD053N08N3GATMA1, МОП-транзистор, N Канал, 90 А, 80 В, 4.4 мОм, 10 В, 2.8 В, Транзистор
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Описание
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces.
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.2V |
| Maximum Continuous Drain Current | 90 A |
| Maximum Drain Source Resistance | 9.5 mΩ |
| Maximum Drain Source Voltage | 80 V |
| Maximum Gate Source Voltage | 20 V |
| Maximum Gate Threshold Voltage | 3.5V |
| Maximum Operating Temperature | +175 °C |
| Maximum Power Dissipation | 150 W |
| Minimum Gate Threshold Voltage | 2V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | TO-252 |
| Pin Count | 3 |
| Series | IPD053N08N3 G |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 52 nC @ 10 V |
| Width | 7.36mm |
| Вес, г | 0.42 |
Техническая документация
Datasheet
pdf, 1680 КБ
Datasheet IPD053N08N3GATMA1
pdf, 345 КБ
