DMC2038LVTQ
580 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
313 ֏
от 10 шт. —
234 ֏
от 100 шт. —
161 ֏
2 шт.
на сумму 1 160 ֏
Описание
Электроэлемент
Транзистор N/P-MOSFET, полевой, 20/-20В, 3/-2,1А, 500мВт, TSOT26
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 3.7A(Ta), 2.6A(Ta) |
| Drain to Source Voltage (Vdss) | 20V |
| FET Feature | Logic Level Gate, 1.8V Drive |
| FET Type | N and P-Channel Complementary |
| Gate Charge (Qg) (Max) @ Vgs | 5.7nC @ 4.5V, 10nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds | 530pF @ 10V, 705pF @ 10V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 800mW(Ta) |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 4A, 4.5V, 74 mOhm @ 3A, 4.5V |
| Series | Automotive, AEC-Q101 |
| Supplier Device Package | TSOT-26 |
| Vgs(th) (Max) @ Id | 1V @ 250ВµA |
| Вес, г | 0.04 |