DMG2305UX
427 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
203 ֏
от 10 шт. —
128 ֏
от 100 шт. —
65 ֏
2 шт.
на сумму 854 ֏
Описание
Электроэлемент
MOSFET, P-CH, -20V, SOT-23-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-4.2A, Drain Source Voltage Vds:-20V, On Resistance Rds(on):0.04ohm, Rds(on) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-900mV, Power , RoHS Compliant: Yes
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | P |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Continuous Drain Current | 4.2 A |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | ±8 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 52@4.5V mOhm |
| Screening Level | Automotive |
| Typical Fall Time | 34.7 ns |
| Typical Rise Time | 13.7 ns |
| Typical Turn-Off Delay Time | 79.3 ns |
| Typical Turn-On Delay Time | 10.8 ns |
| Вес, г | 0.03 |
Техническая документация
Документация
pdf, 421 КБ