DMN1019USN
580 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
352 ֏
от 10 шт. —
300 ֏
2 шт.
на сумму 1 160 ֏
Описание
Электроэлемент
MOSFET, N-CH, 12V, 9.3A, SC-59; Transistor Polarity:N Channel; Continuous Drain Current Id:9.3A; Drain Source Voltage Vds:12V; On Resistance Rds(on):0.007ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:530mV; P
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single |
| Factory Pack Quantity | 10000 |
| Fall Time | 16.8 ns |
| Id - Continuous Drain Current | 9.3 A |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SC-59-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.2 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 50.6 nC |
| Rds On - Drain-Source Resistance | 41 mOhms |
| Rise Time | 57.6 ns |
| RoHS | Details |
| Series | DMN10 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 22.2 ns |
| Typical Turn-On Delay Time | 7.6 ns |
| Vds - Drain-Source Breakdown Voltage | 12 V |
| Vgs - Gate-Source Voltage | 8 V |
| Vgs th - Gate-Source Threshold Voltage | 0.53 V |
| Current - Continuous Drain (Id) @ 25В°C | 9.3A(Ta) |
| Drain to Source Voltage (Vdss) | 12V |
| Drive Voltage (Max Rds On, Min Rds On) | 1.2V, 2.5V |
| FET Feature | - |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 50.6nC 8V |
| Input Capacitance (Ciss) (Max) @ Vds | 2426pF 10V |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В C ~ 150В C(TJ) |
| Part Status | Active |
| Power Dissipation (Max) | 680mW(Ta) |
| Rds On (Max) @ Id, Vgs | 10mOhm 9.7A, 4.5V |
| Supplier Device Package | SC-59 |
| Vgs (Max) | В±8V |
| Vgs(th) (Max) @ Id | 800mV 250ВuA |
| Вес, г | 0.04 |
Техническая документация
Datasheet DMN1019USN-7
pdf, 307 КБ