2N7002A
410 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
172 ֏
от 10 шт. —
97 ֏
от 100 шт. —
31 ֏
2 шт.
на сумму 820 ֏
Описание
Электроэлемент
MOSFET, N-CH, 60V, 0.18A, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:180mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):3.5ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:2V; Power
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Continuous Drain Current | 0.22 A |
| Maximum Drain Source Voltage | 60 V |
| Maximum Gate Source Voltage | ±20 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 6000@5V mOhm |
| Typical Turn-Off Delay Time | 33 ns |
| Typical Turn-On Delay Time | 10 ns |
| Brand | Diodes Incorporated |
| Configuration | Single |
| Factory Pack Quantity | 3000 |
| Height | 1 mm |
| Id - Continuous Drain Current | 115 mA |
| Length | 2.9 mm |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOT-23-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 250 mW |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 6 Ohms |
| RoHS | Details |
| Series | 2N7002 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Unit Weight | 0.000282 oz |
| Vds - Drain-Source Breakdown Voltage | 60 V |
| Vgs - Gate-Source Voltage | 20 V |
| Width | 1.3 mm |
| Вес, г | 0.05 |
Техническая документация
Datasheet 2N7002A-7
pdf, 540 КБ