DDTD113EC
432 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
207 ֏
от 10 шт. —
132 ֏
от 100 шт. —
63 ֏
2 шт.
на сумму 864 ֏
Описание
Электроэлемент
33@50mA,5V 300mV@50mA,2.5mA 1 NPN - Pre Biased 200MHz 200mW 500mA 50V 500nA SOT-23-3 Digital Transistors
Технические параметры
| Base Part Number | DTD113 |
| Current - Collector (Ic) (Max) | 500mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 33 @ 50mA, 5V |
| Frequency - Transition | 200MHz |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Packaging | Tape & Reel(TR) |
| Part Status | Active |
| Power - Max | 200mW |
| Resistor - Base (R1) | 1 kOhms |
| Resistor - Emitter Base (R2) | 1 kOhms |
| Series | - |
| Supplier Device Package | SOT-23-3 |
| Transistor Type | NPN-Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 2.5mA, 50mA |
| Voltage - Collector Emitter Breakdown (Max) | 50V |
| Вес, г | 0.04 |
Техническая документация
Datasheet
pdf, 366 КБ