DMG1012T
410 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
176 ֏
от 10 шт. —
97 ֏
от 100 шт. —
40 ֏
2 шт.
на сумму 820 ֏
Описание
Электроэлемент
MOSFET, N CH, 20V, SOT-523, Transistor Polarity:N Channel, Continuous Drain Current Id:630mA, Drain Source Voltage Vds:20V, On Resistance Rds(on):0.3ohm, Rds(on) Test Voltage Vgs:4.5V, Threshold Voltage Vgs:1V, Power Dissipation , RoHS Compliant: Yes
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Continuous Drain Current | 0.63 A |
| Maximum Drain Source Voltage | 20 V |
| Maximum Gate Source Voltage | ±6 V |
| Mounting | Surface Mount |
| Operating Temperature | -55 to 150 °C |
| RDS-on | 400@4.5V mOhm |
| Screening Level | Commercial |
| Typical Fall Time | 12.3 ns |
| Typical Rise Time | 7.4 ns |
| Typical Turn-Off Delay Time | 26.7 ns |
| Typical Turn-On Delay Time | 5.1 ns |
| Вес, г | 0.06 |
Техническая документация
Datasheet DMG1012TQ-7
pdf, 441 КБ