DMN4800LSS
710 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
418 ֏
от 10 шт. —
335 ֏
от 100 шт. —
248 ֏
2 шт.
на сумму 1 420 ֏
Описание
Электроэлемент
N-Channel 30 V 16 mO 9.47 nC SMT Enhancement Mode Mosfet - SOIC-8
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | Single Quad Drain Triple Source |
| Factory Pack Quantity | 2500 |
| Fall Time | 4.5 ns |
| Height | 1.5 mm |
| Id - Continuous Drain Current | 8.6 A |
| Length | 4.95 mm |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 1 Channel |
| Package / Case | SOIC-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.46 W |
| Product | MOSFET Small Signal |
| Product Category | MOSFET |
| Rds On - Drain-Source Resistance | 20 mOhms |
| Rise Time | 4.5 ns |
| RoHS | Details |
| Series | DMN48 |
| Technology | Si |
| Transistor Polarity | N-Channel |
| Transistor Type | 1 N-Channel |
| Typical Turn-Off Delay Time | 26.33 ns |
| Typical Turn-On Delay Time | 5.03 ns |
| Vds - Drain-Source Breakdown Voltage | 30 V |
| Vgs - Gate-Source Voltage | 25 V |
| Width | 3.95 mm |
| Вес, г | 0.23 |