MJD31C
Описание
Электроэлемент
Power Bipolar Transistor, 3A I(C), 100V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 2 Pin
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 100 V |
| Collector- Emitter Voltage VCEO Max | 100 V |
| Collector-Emitter Saturation Voltage | 1.2 V |
| Configuration | Single |
| Continuous Collector Current | 3 A |
| DC Collector/Base Gain hfe Min | 25 |
| DC Current Gain hFE Max | 40 at 3 A at 4 V |
| Emitter- Base Voltage VEBO | 5 V |
| Factory Pack Quantity | 2500 |
| Gain Bandwidth Product fT | 3 MHz |
| Height | 2.4 mm |
| Length | 6.8 mm |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 3 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | DPAK-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 1560 mW |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | MJD31C |
| Transistor Polarity | NPN |
| Width | 6.2 mm |
| Вес, г | 0.03 |
Техническая документация
Datasheet MJD31C-13
pdf, 367 КБ