ZXMC10A816N8
1 630 ֏
от 2 шт. —
1 240 ֏
от 4 шт. —
980 ֏
1 шт.
на сумму 1 630 ֏
Описание
Электроэлемент
Dual N/P-Channel MOSFET, 2.3 A, 2.4 A, 100 V, 8-Pin SOIC Diodes Inc ZXMC10A816N8TC
Технические параметры
| Current - Continuous Drain (Id) @ 25В°C | 2A |
| Drain to Source Voltage (Vdss) | 100V |
| FET Feature | Logic Level Gate |
| FET Type | N and P-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 9.2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 497pF @ 50V |
| Manufacturer | Diodes Incorporated |
| Mounting Type | Surface Mount |
| Operating Temperature | -55В°C ~ 150В°C(TJ) |
| Package / Case | 8-SOIC(0.154", 3.90mm Width) |
| Packaging | Cut Tape(CT) |
| Part Status | Active |
| Power - Max | 1.8W |
| Rds On (Max) @ Id, Vgs | 230mOhm @ 1A, 10V |
| Supplier Device Package | 8-SOP |
| Vgs(th) (Max) @ Id | 2.4V @ 250ВµA |
| Вес, г | 0.12 |
Техническая документация
Datasheet ZXMC10A816N8TC
pdf, 430 КБ