BCP56-16

580 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт.291 ֏
от 10 шт.207 ֏
от 100 шт.131 ֏
2 шт. на сумму 1 160 ֏
Номенклатурный номер: 8001960306
Бренд: DIODES INC.

Описание

Электроэлемент
Биполярный транзистор, NPN, 80 В, 1 А, 2Вт

Технические параметры

Base Part Number BCP56
Current - Collector (Ic) (Max) 1A
Current - Collector Cutoff (Max) 100nA(ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 2V
Frequency - Transition 150MHz
Manufacturer Diodes Incorporated
Mounting Type Surface Mount
Operating Temperature -55В°C ~ 150В°C(TJ)
Package / Case TO-261-4, TO-261AA
Packaging Cut Tape(CT)
Part Status Active
Power - Max 2W
Supplier Device Package SOT-223
Transistor Type NPN
Vce Saturation (Max) @ Ib, Ic 500mV @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 80V
Brand Diodes Incorporated
Collector- Base Voltage VCBO 100 V
Collector- Emitter Voltage VCEO Max 80 V
Collector-Emitter Saturation Voltage 0.5 V
Configuration Single
Continuous Collector Current 1 A
DC Collector/Base Gain hfe Min 25 at 5 mA at 2 V
DC Current Gain hFE Max 250 at 150 mA at 2 V
Emitter- Base Voltage VEBO 5 V
Factory Pack Quantity 1000
Gain Bandwidth Product fT 125 MHz
Maximum DC Collector Current 1 A
Maximum Operating Temperature +150 C
Minimum Operating Temperature -55 C
Mounting Style SMD/SMT
Pd - Power Dissipation 2 W
Product Category Bipolar Transistors-BJT
RoHS Details
Series BCP56
Transistor Polarity NPN
Вес, г 0.24

Техническая документация

Datasheet
pdf, 424 КБ