BCP5616
![](https://static.chipdip.ru/images/layout/noimage/230px.png)
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
229 ֏
от 10 шт. —
146 ֏
от 100 шт. —
71 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
Trans GP BJT NPN 80V 1A Automotive 4-Pin(3+Tab) SOT-223 T/R
Технические параметры
Brand | Diodes Incorporated |
Collector- Base Voltage VCBO | 100 V |
Collector- Emitter Voltage VCEO Max | 80 V |
Collector-Emitter Saturation Voltage | 0.5 V |
Configuration | Single |
Continuous Collector Current | 1 A |
DC Collector/Base Gain hfe Min | 25 at 5 mA at 2 V |
DC Current Gain hFE Max | 250 at 150 mA at 2 V |
Emitter- Base Voltage VEBO | 5 V |
Factory Pack Quantity | 1000 |
Gain Bandwidth Product fT | 125 MHz |
Manufacturer | Diodes Incorporated |
Maximum DC Collector Current | 1 A |
Maximum Operating Temperature | +150 C |
Minimum Operating Temperature | -55 C |
Mounting Style | SMD/SMT |
Package / Case | SOT-223-4 |
Packaging | Reel |
Pd - Power Dissipation | 2 W |
Product Category | Bipolar Transistors-BJT |
RoHS | Details |
Series | BCP56 |
Transistor Polarity | NPN |
Base Part Number | BCP56 |
Current - Collector (Ic) (Max) | 1A |
Current - Collector Cutoff (Max) | 100nA(ICBO) |
DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 2V |
Frequency - Transition | 150MHz |
Mounting Type | Surface Mount |
Operating Temperature | -55В°C ~ 150В°C(TJ) |
Part Status | Active |
Power - Max | 2W |
Supplier Device Package | SOT-223 |
Transistor Type | NPN |
Vce Saturation (Max) @ Ib, Ic | 500mV @ 50mA, 500mA |
Voltage - Collector Emitter Breakdown (Max) | 80V |
Вес, г | 0.24 |
Техническая документация
Datasheet
pdf, 424 КБ