BC847PN
484 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
234 ֏
от 10 шт. —
159 ֏
от 100 шт. —
87 ֏
2 шт.
на сумму 968 ֏
Описание
Электроэлемент
TRANSISTOR, NPN, SOT363; Transistor Polarity:NPN, PNP; Collector Emitter Voltage V(br)ceo:45V; Transition Frequency ft:300MHz; Power Dissipation Pd:200mW; DC Collector Current:-100mA; DC Current Gain hFE:290hFE; Transist
Технические параметры
| Lead Finish | Matte Tin |
| Max Processing Temp | 260 |
| Maximum Base Emitter Saturation Voltage | 0.7@0.5mA@10mA@NPNI0.9@5mA@100mA@NPNI0.95@5mA@100mA@PNP V |
| Maximum Collector Base Voltage | 50 V |
| Maximum Collector Emitter Saturation Voltage | 0.25@0.5mA@10mA@NPNI0.6@5mA@100mA@NPNI0.3@0.5mA@10mA@PNPI0.65@5mA@100mA@PNP V |
| Maximum Collector Emitter Voltage | 45 V |
| Maximum DC Collector Current | 0.1 A |
| Maximum Emitter Base Voltage | 6@NPNI5@PNP V |
| Maximum Power Dissipation | 200 mW |
| Minimum DC Current Gain | 200@2mA@5V@NPNI220@2mA@5V@PNP |
| Mounting | Surface Mount |
| Operating Temperature | -65 to 150 °C |
| Type | NPNIPNP |
| Вес, г | 0.03 |
Техническая документация
Datasheet BC847PN-7-F
pdf, 453 КБ