DMC2020USD
800 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
530 ֏
от 10 шт. —
423 ֏
от 70 шт. —
340 ֏
2 шт.
на сумму 1 600 ֏
Описание
Электроэлемент
Dual N/P-Channel MOSFET, 5.2 A, 8.5 A, 20 V, 8-Pin SOIC Diodes Inc DMC2020USD-13
Технические параметры
| Brand | Diodes Incorporated |
| Channel Mode | Enhancement |
| Configuration | N-Channel, P-Channel |
| Factory Pack Quantity | 2500 |
| Id - Continuous Drain Current | 8.5 A, 6.8 A |
| Manufacturer | Diodes Incorporated |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Number of Channels | 2 Channel |
| Package / Case | SOIC-8 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.25 W |
| Product Category | MOSFET |
| Qg - Gate Charge | 11.6 nC |
| Rds On - Drain-Source Resistance | 28 mOhms, 45 mOhms |
| RoHS | Details |
| Series | DMC2020 |
| Technology | Si |
| Transistor Polarity | N-Channel, P-Channel |
| Transistor Type | 1 N-Channel, 1 P-Channel |
| Vds - Drain-Source Breakdown Voltage | 20 V, 20 V |
| Vgs - Gate-Source Voltage | 10 V |
| Vgs th - Gate-Source Threshold Voltage | 1.1 V |
| Вес, г | 0.41 |
Техническая документация
Документация
pdf, 464 КБ