ZXTN4006Z
660 ֏
Мин. кол-во для заказа 2 шт.
от 5 шт. —
396 ֏
от 10 шт. —
313 ֏
от 100 шт. —
227 ֏
2 шт.
на сумму 1 320 ֏
Описание
Электроэлемент
50nA 200V 1.5W 60@85mA,200mV 1A 250mV@100mA,5mA NPN -55°C~+150°C@(Tj) SOT-89-3 BIpolar TransIstors - BJT
Технические параметры
| Brand | Diodes Incorporated |
| Collector- Base Voltage VCBO | 200 V |
| Collector- Emitter Voltage VCEO Max | 200 V |
| Configuration | Single |
| Continuous Collector Current | 1 A |
| DC Collector/Base Gain hfe Min | 60 at 85 mA at 0.25 V |
| DC Current Gain hFE Max | 100 at 150 mA at 0.32 V |
| Emitter- Base Voltage VEBO | 7 V |
| Factory Pack Quantity | 1000 |
| Manufacturer | Diodes Incorporated |
| Maximum DC Collector Current | 0.5 A |
| Maximum Operating Temperature | +150 C |
| Minimum Operating Temperature | -55 C |
| Mounting Style | SMD/SMT |
| Package / Case | SOT-89-3 |
| Packaging | Reel |
| Pd - Power Dissipation | 1.5 W |
| Product Category | Bipolar Transistors-BJT |
| RoHS | Details |
| Series | ZXTN4006 |
| Transistor Polarity | NPN |
| Вес, г | 0.19 |
Техническая документация
Datasheet
pdf, 120 КБ