FDC658P, Транзистор P-MOSFET, полевой, -30В, -4А, 1,6Вт, SuperSOT-6
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см. техническую документацию
см. техническую документацию
880 ֏
от 10 шт. —
484 ֏
от 25 шт. —
427 ֏
от 100 шт. —
343 ֏
1 шт.
на сумму 880 ֏
Описание
Semiconductors\Transistors\Unipolar transistors\P channel transistors
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Case | SuperSOT-6 |
| Drain current | -4A |
| Drain-source voltage | -30V |
| Gate charge | 12nC |
| Gate-source voltage | ±20V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 80mΩ |
| Polarisation | unipolar |
| Power dissipation | 1.6W |
| Technology | PowerTrench® |
| Type of transistor | P-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 4 A |
| Maximum Drain Source Resistance | 50 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -20 V, +20 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.6 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 8 nC @ 5 V |
| Width | 1.7mm |
| Вес, г | 0.03 |