IXFP80N25X3, Транзистор: N-MOSFET, полевой, 250В, 80А, 390Вт, TO220-3, 120нс
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10 700 ֏
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6 900 ֏
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Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
Описание Транзистор: N-MOSFET, полевой, 250В, 80А, 390Вт, TO220-3, 120нс Характеристики | Категория | Транзистор |
| Тип | полевой |
| Вид | MOSFET |
Технические параметры
| Case | TO220AB |
| Drain current | 80A |
| Drain-source voltage | 250V |
| Features of semiconductor devices | ultra junction x-class |
| Gate charge | 83nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 16mΩ |
| Polarisation | unipolar |
| Power dissipation | 390W |
| Reverse recovery time | 120ns |
| Type of transistor | N-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 16 mΩ |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 390 W |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Through Hole |
| Number of Elements per Chip | 1 |
| Package Type | TO-220 |
| Pin Count | 3 |
| Series | HiperFET |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 83 @ 10 V nC |
| Width | 4.83mm |
| Вес, г | 3 |