IXFA80N25X3, Транзистор N-MOSFET, 250В, 80А, 390Вт, TO263, 120нс
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см. техническую документацию
см. техническую документацию
9 900 ֏
от 3 шт. —
7 700 ֏
от 10 шт. —
6 300 ֏
от 50 шт. —
5 700 ֏
1 шт.
на сумму 9 900 ֏
Описание
Lowest on-resistance RDS(ON) and gate charge Qg Fast soft recovery body diode dv/dt ruggedness Superior avalanche capability
Технические параметры
| Channel Mode | Enhancement |
| Channel Type | N |
| Forward Diode Voltage | 1.4V |
| Maximum Continuous Drain Current | 80 A |
| Maximum Drain Source Resistance | 16 mΩ |
| Maximum Drain Source Voltage | 250 V |
| Maximum Gate Source Voltage | ±20 V |
| Maximum Gate Threshold Voltage | 4.5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 390 W |
| Minimum Gate Threshold Voltage | 2.5V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | D2PAK(TO-263) |
| Pin Count | 3 |
| Series | HiperFET |
| Transistor Configuration | Single |
| Typical Gate Charge @ Vgs | 83 @ 10 V nC |
| Width | 11.05mm |
| Вес, г | 2.5 |