FDS6681Z, Транзистор P-MOSFET, полевой, -30В, -20А, 2,5Вт, SO8, PowerTrench®
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см. техническую документацию
см. техническую документацию
2 420 ֏
от 5 шт. —
1 980 ֏
от 25 шт. —
1 580 ֏
от 100 шт. —
1 310 ֏
1 шт.
на сумму 2 420 ֏
Описание
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Case | SO8 |
| Drain current | -20A |
| Drain-source voltage | -30V |
| Gate charge | 260nC |
| Gate-source voltage | ±25V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 6.5mΩ |
| Polarisation | unipolar |
| Power dissipation | 2.5W |
| Technology | PowerTrench® |
| Type of transistor | P-MOSFET |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 20 A |
| Maximum Drain Source Resistance | 5 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 2.5 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOIC |
| Pin Count | 8 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 185 nC @ 10 V |
| Width | 4mm |
| Product Height | 1.5mm |
| Product Length | 5mm |
| Product Width | 3.99mm |
| Supplier Package | SOIC N |
| Typical Fall Time | 380ns |
| Typical Rise Time | 9ns |
| Typical Turn-Off Delay Time | 660ns |
| Typical Turn-On Delay Time | 20ns |
| конфигурация | Single; Quad Drain, Triple Source |
| максимальная рабочая температура | 150°C |
| монтаж (установка) | Surface Mount |
| разрешение | Power MOSFET |
| Вес, г | 0.11 |