IXFP22N65X2, Транзистор N-MOSFET, 650В, 22А, 390Вт, TO220-3, 145нс
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
5 700 ֏
от 3 шт. —
4 980 ֏
от 10 шт. —
3 850 ֏
1 шт.
на сумму 5 700 ֏
Описание
Semiconductors\Transistors\Unipolar transistors\N channel transistors
HiPerFET™ Power MOSFETsIXYS HiPerFET™ Power MOSFETs are for hard switching and resonant mode applications. The devices offer low gate charge, excellent ruggedness with a fast intrinsic diode, and higher current handling capability that eliminates the need for multiple components. These high current HiPerFET MOSFETs are available in standard industrial packages, including isolated types.
Технические параметры
| Case | TO220AB |
| Drain current | 22A |
| Drain-source voltage | 650V |
| Features of semiconductor devices | ultra junction x-class |
| Gate charge | 37nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | THT |
| On-state resistance | 0.145Ω |
| Polarisation | unipolar |
| Power dissipation | 390W |
| Reverse recovery time | 145ns |
| Type of transistor | N-MOSFET |
| Brand: | IXYS |
| Channel Mode: | Enhancement |
| Configuration: | Single |
| Factory Pack Quantity: Factory Pack Quantity: | 50 |
| Fall Time: | 10 ns |
| Forward Transconductance - Min: | 8 S |
| Id - Continuous Drain Current: | 22 A |
| Manufacturer: | IXYS |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -55 C |
| Mounting Style: | Through Hole |
| Number of Channels: | 1 Channel |
| Package / Case: | TO-220-3 |
| Packaging: | Tube |
| Pd - Power Dissipation: | 390 W |
| Product Category: | MOSFET |
| Product Type: | MOSFET |
| Qg - Gate Charge: | 38 nC |
| Rds On - Drain-Source Resistance: | 160 mOhms |
| Rise Time: | 35 ns |
| Series: | 650V Ultra Junction X2 |
| Subcategory: | MOSFETs |
| Technology: | Si |
| Tradename: | HiPerFET |
| Transistor Polarity: | N-Channel |
| Typical Turn-Off Delay Time: | 33 ns |
| Typical Turn-On Delay Time: | 38 ns |
| Vds - Drain-Source Breakdown Voltage: | 650 V |
| Vgs - Gate-Source Voltage: | -30 V, +30 V |
| Vgs th - Gate-Source Threshold Voltage: | 2.7 V |
| Вес, г | 2.08 |
Техническая документация
Datasheet
pdf, 326 КБ