FDC610PZ, Транзистор P-MOSFET, полевой, -30В, -4,9А, 1,6Вт, SuperSOT-6
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484 ֏
от 10 шт. —
242 ֏
1 шт.
на сумму 484 ֏
Описание
Semiconductors\Transistors\Unipolar transistors\P channel transistors
PowerTrench® MOSFETs are optimised power switches that offer increase of system efficiency and power density.
Технические параметры
| Case | SuperSOT-6 |
| Drain current | -4.9A |
| Drain-source voltage | -30V |
| Gate charge | 13nC |
| Gate-source voltage | ±25V |
| Kind of channel | enhanced |
| Kind of package | reel, tape |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 75mΩ |
| Polarisation | unipolar |
| Power dissipation | 1.6W |
| Technology | PowerTrench® |
| Type of transistor | P-MOSFET |
| Continuous Drain Current (Id) | 4.9A |
| Drain Source On Resistance (RDS(on)@Vgs,Id) | 42mΩ@4.9A, 10V |
| Drain Source Voltage (Vdss) | 30V |
| Gate Threshold Voltage (Vgs(th)@Id) | 3V@250uA |
| Input Capacitance (Ciss@Vds) | 1.005nF@15V |
| Operating Temperature | -55℃~+150℃@(Tj) |
| Power Dissipation (Pd) | 1.6W |
| Reverse Transfer Capacitance (Crss@Vds) | - |
| Total Gate Charge (Qg@Vgs) | 24nC@10V |
| Type | P Channel |
| Channel Mode | Enhancement |
| Channel Type | P |
| Maximum Continuous Drain Current | 4.9 A |
| Maximum Drain Source Resistance | 75 mΩ |
| Maximum Drain Source Voltage | 30 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 1.6 W |
| Minimum Gate Threshold Voltage | 1V |
| Minimum Operating Temperature | -55 °C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package Type | SOT-23 |
| Pin Count | 6 |
| Series | PowerTrench |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 17 nC @ 10 V |
| Width | 1.7mm |
| Вес, г | 0.05 |